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CM200DU-24F

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CM200DU-24F

Powerex Inc

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Specifications

CategorySemiconductor Modules
FamilyIGBTs
SeriesIGBTMOD™
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 200A
Current - Collector (Ic) (Max)200A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce78nF @ 10V
Power - Max890W
InputStandard
NTC ThermistorNo
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
Dynamic CatalogIGBTMOD

Data sheet

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1
Trench Gate Design
Dual IGBTMOD™
200 Amperes / 1200 Volts
CM200DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A4.25 108.0
B2.44 62.0
C1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F0.67 17.0
G0.16 4.0
H0.24 6.0
J0.59 15.0
K0.55 14.0
Dimensions Inches Millimeters
L0.87 22.0
M0.33 8.5
N0.10 2.5
P0.85 21.5
Q0.98 25.0
R0.11 2.8
SM6 M6
T0.26 Dia. 6.5 Dia.
U0.02 0.5
V0.62 15.85
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recover y
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24F is a
1200V (VCES), 200 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 24
K
D
C
A
EB
S - NUTS (3 TYP)
CM
KK
L
R
M
J
T (4 TYP.)
PQ
C2E1
Q
E2
C
L
N
C1
F
H
G
H
G1
E1
E2
G2
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
TC MEASURING
POINT
U
V

CM200DU-24F Summary of contents

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